PART |
Description |
Maker |
PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
DDTD133HC-7-F DDTD143EC DDTD113EC DDTD113EC09 DDTD |
Prebiased Transistors 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3 NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR
|
Diodes, Inc. Diodes Incorporated Diodes Inc.
|
MJ13333_D ON1977 MJ13333 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400-500 VOLTS 175 WATTS From old datasheet system 20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
|
ON Semiconductor Motorola, Inc
|
BC817-16W Q62702-C2320 Q62702-C2323 Q62702-C2324 Q |
RES FIX, 324 OHM.125W 1% SMDA 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN Silicon AF Transistor (For general AF applications High collector current High current gain) 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
KSC5021RTU |
5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
CFD2375P CFD2375Q |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 800 - 1500 hFE. 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1000 hFE. 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1500 hFE.
|
Continental Device India Limited
|
2N6426RLRAG |
Darlington Transistors NPN Silicon 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
BC487 BC487B BC487G BC487BRL1 BC487BG |
High Current Transistors NPN Silicon 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
MTD1P50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM 1 A, 500 V, 15 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Motorola, Inc
|
2SB1516F5/NP 2SA1727F5/NP 2SD1918F5/NP 2SD1767T101 |
3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.7 A, 80 V, NPN, Si, POWER TRANSISTOR 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR 5 A, 20 V, PNP, Si, POWER TRANSISTOR 1 A, 32 V, NPN, Si, POWER TRANSISTOR 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
International Rectifier, Corp. Dielectric Laboratories, Inc.
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
|